Assistant Professor Becky Peterson
Electrical Engineering and Computer Science Department
University of Michigan
Becky (R. L.) Peterson received her B.S., M.S. and Ph.D. degrees from University of Rochester, NY, University of Minnesota – Twin Cities, and Princeton University, respectively, all in electrical engineering. She was previously a post-doctoral researcher at the Cavendish Laboratory, Department of Physics, and an Associate Lecturer at Newnham College at Cambridge University, UK. Since 2013 she has been anAssistant Professor at the University of Michigan in Electrical Engineering and Computer Science. Dr. Peterson is the recipient of the University of Michigan’s2018 Henry Russel Award, an NSF CAREER award in 2017, a DARPA Young Faculty Award in 2014and Director’s Fellowship in 2016, anElizabeth C. Crosby Research Award in 2013, and she is a Senior Member of IEEE. She serves on the Technical Program Committee of the IEEE/MRS Device Research Conference and on the Organizing Committee of the MRS Electronic Materials Conference.For more information about her research, please visit http://www.eecs.umich.edu/~blpeters
Date : 28th August, 2017
Title: Recent Advances in Oxide Power Devcies
Oxide semiconductors’ unique properties – a wide bandgap, reasonably high electron mobility, and ease of bulk and thin film preparation – have facilitated their commercial success in electronics. Metal oxide varistors made with polycrystalline zinc oxide, which were invented in 1968, dominate the market for medium range surge arresters. More recently, amorphous indium gallium zinc oxide has replaced amorphous silicon in the active matrix backplane of displays made by Apple, Microsoft, and Sharp, to enable large-scale, high frame rate displays using organic light emitting diodes. In this talk, I will describe my group’s recent development of amorphous and crystalline oxide semiconductors for power electronics. We report a facile solution process for deposition of amorphous zinc tin oxide (ZTO) thin film semiconductors. Use of inks with metal organic decomposition routes facilitates a wide process window for relative humidity to enable future low-cost, large-scale manufacturing for flexible electronics or heterointegration with CMOS or other platforms. We demonstrate the utility of the solution-processed ZTO semiconductor in two power electronic device architectures: (1) lateral thin film transistors with gate-drain offset for high voltage switches, and (2) vertical Schottky diodes for AC-DC conversion and energy harvesting circuits. The vertical diode configuration minimizes on-resistance and exploits in situoxidation and reduction processes at the rectifying bottom electrode. Finally, I will report on our work on physics-based material characterization of beta-phase gallium oxide for high voltage (~1kV) power electronics.